FDMA291P دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
FDMA291P
|
|
حجم فایل
|
70.016
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDMA291P
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
2.4W
-
Total Gate Charge (Qg@Vgs):
14nC@4.5V
-
Input Capacitance (Ciss@Vds):
1000pF@10V
-
Continuous Drain Current (Id):
6.6A
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
42mΩ@6.6A,4.5V
-
Package:
WDFN-6
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
20V
-
Current - Continuous Drain (Id) @ 25°C:
6.6A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
-
Rds On (Max) @ Id, Vgs:
42mOhm @ 6.6A, 4.5V
-
Vgs(th) (Max) @ Id:
1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 4.5V
-
Vgs (Max):
±8V
-
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 10V
-
FET Feature:
-
-
Power Dissipation (Max):
2.4W (Ta)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
6-MicroFET (2x2)
-
Package / Case:
6-VDFN Exposed Pad
-
Base Part Number:
FDMA29
-
detail:
P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
